Substrate supporting means having wire and apparatus using the same

ABSTRACT

An apparatus includes: a process chamber for treating a substrate; a susceptor in the process chamber; a supporting frame over the susceptor; and at least one wire connected to the supporting frame.

BACKGROUND OF THE INVENTION

The present invention claims the benefit of Korean Patent ApplicationsNo. 2004-0004294 filed in Korea on Jan. 20, 2004, No. 2004-0022648 filedin Korea on Apr. 1, 2004 and No. 2005-0001505 filed in Korea on Jan. 7,2005, each of which is hereby incorporated by reference.

1. Field of the Invention

The present invention relates to an apparatus of fabricating asemiconductor device, and more particularly, to a substrate supportingmeans for a plasma apparatus of fabricating a liquid crystal displaydevice.

2. Discussion of the Related Art

Flat panel display (FPD) devices having portability and low powerconsumption have been a subject of increasing research in the presentinformation age. Among the various types of FPD devices, liquid crystaldisplay (LCD) devices are commonly used in notebook and desktopcomputers because of their high resolution, capability of displayingcolored images, and high quality image display.

In general, an LCD device is a non-emissive device having an arraysubstrate, a color filter substrate and a liquid crystal layerinterposed between the array substrate and the color filter substrates,and displaying images by making use of optical anisotropy properties ofthe liquid crystal layer. In addition, an LCD device is fabricated byrepeating a deposition step of a thin film on a substrate, aphotolithographic step using a photoresist, a selective etching step ofthe thin film and a cleaning step of the substrate. These steps for afabrication process of an LCD device may be performed using an apparatushaving a process chamber under an optimum condition. A plasma apparatuswhere source gases are excited to radicals of a plasma state by a highfrequency power is used for deposition, etching and cleaning steps of anLCD device. Recently, a plasma enhanced chemical vapor deposition(PECVD) apparatus has been widely used as a plasma apparatus.

FIG. 1 is a schematic cross-sectional view showing a plasma apparatusfor a liquid crystal display device according to the related art. InFIG. 1, a plasma apparatus includes a process chamber 100 having a lid112 and a chamber body 114. A gas inlet pipe 122 is formed through amiddle portion of the lid 112 and a backing plate (not shown) under thelid 112. A shower head 120 having a plurality of through holes (notshown) is formed under the backing plate. Accordingly, source gases areinjected to the shower head 120 through the gas inlet pipe 122 and aredispersed into a space over a susceptor 130 in the process chamber 100through the plurality of through holes. Since a gas dispersion unitincluding the backing plate and the shower head 120 is connected to ahigh frequency (e.g., a radio frequency) power supply unit 124, thesource gases are excited to have a plasma state. For example, the showerhead 120 of the gas dispersion unit may function as an upper electrodeto obtain a plasma state of the source gases. In addition, the chamberbody 114 has a slot valve 146 for transferring a substrate “S.”

The susceptor 130 is disposed in the chamber body 114. After a substrate“S” is transferred into the process chamber 100, the substrate “S” isplaced on the susceptor 130. A heater (not shown) for heating thesubstrate “S” during a fabrication process is formed in the susceptor130 and is connected to an external power source (not shown). Forexample, the susceptor 130 may function as a lower electrode to obtain aplasma state of the source gases. A susceptor-supporter 134 extends froma rear central portion of the susceptor 130 and a susceptor driving unit144 such as a motor is connected to the susceptor-supporter 134 to moveup and down the susceptor 130. In addition, a gas outlet pipe 142 isformed through a bottom portion of the chamber body 114. The gas outletpipe 142 is connected to a vacuum pump (not shown) to evacuate residualgases and particles in the process chamber 100 after the fabricationprocess.

A plurality of lift pins 150 are formed to penetrate the susceptor 130perpendicularly. The substrate “S” is supported by the plurality of liftpins 150 while the substrate “S” is transferred from a robot arm (notshown) to the susceptor 130 before the fabrication process and from thesusceptor 130 to the robot arm after the fabrication process.Accordingly, the susceptor 130 moves up and down by the susceptordriving unit 144 while the substrate “S” is transferred into and out ofthe process chamber 100, and the plurality of lift pins 150 areprotruded above and indented under a top surface of the susceptor 130.As a result, the substrate “S” is transferred from the plurality of liftpins 150 to the susceptor 130, and vice versa.

FIGS. 2A to 2C are schematic cross-sectional views showing a transferprocess of a substrate in a plasma apparatus for a liquid crystaldisplay device according to the related art. In FIG. 2A, a substrate “S”on a robot arm 160 is transferred into a process chamber 100 (of FIG. 1)and placed over a susceptor 130. A plurality of lift pins 150 isprotruded above a top surface of the susceptor 130 through a pluralityof lift pin holes 136, and a bottom surface of the substrate “S” isseparated from the plurality of lift pin 150. Next, the substrate “S”contacts the plurality of lift pins 150 by moving down the robot arm160.

In FIG. 2B, the robot arm 160 is returned to an exterior of the processchamber 100 (of FIG. 1) and the substrate “S” is supported by theplurality of lift pins 150 protruded above the top surface of thesusceptor 130.

In FIG. 2C, since the susceptor 130 moves up by a susceptor driving unit144 (of FIG. 1), the plurality of lift pins 150 relatively move downthrough a plurality of lift pin holes 136. Accordingly, the substrate“S” is placed on the top surface of the susceptor 130. The lift pin 150has a greater diameter at an upper portion 150 a than at the otherportion to prevent complete separation of the lift pin 150 from the liftpin hole 136 of the susceptor 130. Similarly, the lift pin hole 136 alsohas a greater diameter at an upper portion 136 a than at the otherportion.

Even though not shown, the susceptor 130 having the substrate “S”thereon moves up to a reaction region of the process chamber 100 (ofFIG. 1), and a thin film is formed on the substrate “S” due to sourcegases, a high frequency power and a heat. After the thin film is formed,the substrate “S” is supported by the plurality of lift pins 150 bymoving down the susceptor 130. Next, the robot arm 160 is placed betweenthe substrate “S” and the plurality of lift pins 150 and then thesubstrate “S” is transferred out of the process chamber 100 (of FIG. 1).

Since the plurality of lift pins are formed through the susceptor havinga heater therein, the plurality of lift pins may be defected by a heatof the heater during a fabrication process. Specifically, lift pinsadjacent to the heater may be easily broken due to a high temperature.Moreover, when the substrate is placed on the plurality of lift pins,the substrate may be defected by sliding over from a predeterminedposition. Recently, as a size of the substrate increases, more numbersof lift pins are required to support the substrate. When lift pinspenetrating a central portion of the susceptor are defected, acorresponding central portion of the substrate is not supported, therebythe substrate warped or broken.

In addition, since the susceptor has a plurality of lift pin holescorresponding to the plurality of lift pins, a heat from the heater inthe susceptor is released through the plurality of lift pin holes and isnot completely transmitted to the substrate. Accordingly, an optimumfabrication process of a thin film is not obtained. Further, since aplasma density at a portion adjacent to the plurality of lift pin holesis different from that of the other portions, the thin film on thesubstrate have a non-uniform thickness. This non-uniform thickness ofthe thin film may deteriorate a resultant LCD device.

SUMMARY OF THE INVENTION

Accordingly, the present invention is directed to a plasma apparatususing a substrate supporting means that substantially obviates one ormore of the problems due to limitations and disadvantages of the relatedart.

An object of the present invention is to provide a substrate supportingmeans having a wire and a plasma apparatus using the substratesupporting means.

Another object of the present invention is to provide a substratesupporting means and a plasma apparatus using the substrate supportingmeans where a uniformity in a fabrication process is improved.

Another object of the present invention is to provide a substratesupporting means and a plasma apparatus using the substrate supportingmeans where a heat is uniformly transmitted to a substrate and a plasmais uniformly formed during a fabrication process.

Additional features and advantages of the invention will be set forth inthe description which follows, and in part will be apparent from thedescription, or may be learned by practice of the invention. Theobjectives and other advantages of the invention will be realized andattained by the structure particularly pointed out in the writtendescription and claims hereof as well as the appended drawings.

To achieve these and other advantages and in accordance with the purposeof the present invention, as embodied and broadly described, a means forsupporting a substrate includes: a susceptor; a supporting frame overthe susceptor; and at least one wire connected to the supporting frame.

In another aspect, an apparatus includes: a process chamber for treatinga substrate; a susceptor in the process chamber; a supporting frame overthe susceptor; and at least one wire connected to the supporting frame.

In another aspect, an apparatus includes: a process chambers fortreating a substrate; a susceptor in the process chamber; a plurality ofwires over the susceptor, the plurality of wires being connected to oneof a sidewall and a bottom surface of the process chamber; and a tensioncontrolling unit connected to one end of each wire.

In another aspect, a method of transferring a substrate in an apparatusincludes; a) moving a robot arm having the substrate thereon into aprocess chamber of the apparatus, the robot arm being disposed over asupporting frame, a plurality of wires connected to the supportingframe, and a susceptor under the supporting frame in the processchamber; b) moving down the robot arm such that the substrate issupported by the plurality of wires; c) moving the robot arm out of theprocess chamber; and d) moving up the susceptor such that the substrateis supported by the susceptor.

It is to be understood that both the foregoing general description andthe following detailed description are exemplary and explanatory and areintended to provide further explanation of the invention as claimed.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings, which are included to provide a furtherunderstanding of the invention and are incorporated in and constitute apart of this specification, illustrate embodiments of the invention andtogether with the description serve to explain the principles of theinvention. In the drawings:

FIG. 1 is a schematic cross-sectional view showing a plasma apparatusfor a liquid crystal display device according to the related art;

FIGS. 2A to 2C are schematic cross-sectional views showing a transferprocess of a substrate in a plasma apparatus for a liquid crystaldisplay device according to the related art;

FIG. 3 is a schematic cross-sectional view of a plasma apparatusaccording to an exemplary embodiment of the present invention;

FIGS. 4A and 4B are schematic plane and perspective views, respectively,showing a substrate supporting unit in a plasma apparatus according toan exemplary embodiment of the present invention;

FIG. 5 is a schematic cross-sectional view taken along a line V-V ofFIG. 4A;

FIGS. 6A to 6F are schematic perspective views showing a method oftransferring a substrate in a plasma apparatus according to an exemplaryembodiment of the present invention;

FIGS. 7A to 7F are schematic cross-sectional views showing a method oftransferring a substrate in a plasma apparatus according to an exemplaryembodiment of the present invention;

FIG. 8 is a schematic perspective view showing a substrate supportingunit in a plasma apparatus according to another exemplary embodiment ofthe present invention;

FIGS. 9A and 9B are schematic perspective views showing a method oftransferring a substrate in a plasma apparatus according to anotherexemplary embodiment of the present invention;

FIG. 10 is a schematic cross-sectional view of a plasma apparatusaccording to another exemplary embodiment of the present invention;

FIG. 11 is a schematic perspective view showing a substrate supportingunit in a plasma apparatus according to another exemplary embodiment ofthe present invention;

FIGS. 12A to 12D are schematic cross-sectional views showing a method oftransferring a substrate in a plasma apparatus according to anotherexemplary embodiment of the present invention;

FIG. 13 is a schematic cross-sectional view of a plasma apparatusaccording to another exemplary embodiment of the present invention;

FIGS. 14A and 14B are schematic plane and perspective views,respectively, showing a substrate supporting unit in a plasma apparatusaccording to another exemplary embodiment of the present invention;

FIGS. 15A and 15B are schematic plane and perspective views,respectively, showing a substrate supporting unit in a plasma apparatusaccording to another exemplary embodiment of the present invention;

FIGS. 16A and 16B are schematic perspective and plane views showing asubstrate supporting unit in a plasma apparatus according to anotherexemplary embodiment of the present invention;

FIGS. 17A to 17F are schematic cross-sectional views showing a method oftransferring a substrate in a plasma apparatus according to anotherexemplary embodiment of the present invention;

FIGS. 18 and 19 are schematic cross-sectional and plane views,respectively, showing a substrate supporting unit in a plasma apparatusaccording to another exemplary embodiment of the present invention;

FIGS. 20A to 20F are schematic cross-sectional views showing a method oftransferring a substrate in a plasma apparatus having a substratesupporting unit of FIGS. 18 and 19;

FIG. 21A is a schematic cross-sectional view showing a susceptor and asubstrate in a plasma apparatus according to an exemplary embodiment ofthe present invention;

FIG. 21B is a graph showing a thickness of a thin film on a substrate ofFIG. 21A;

FIGS. 22 and 23 are schematic plane views showing a susceptor of aplasma apparatus according to another embodiment of the presentinvention;

FIG. 24A is a schematic cross-sectional view showing a susceptor and athin film of a plasma apparatus according to another embodiment of thepresent invention; and

FIG. 24B is a graph showing a thickness of a thin film on a substrate ofFIG. 24B.

FIGS. 25A and 25B are schematic cross-sectional views showing aplurality of wire grooves in a susceptor of a plasma apparatus accordingto another exemplary embodiment of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Reference will now be made in detail to the preferred embodiments,examples of which are illustrated in the accompanying drawings.

Since the present invention relates to a plasma apparatus such as aplasma enhanced chemical vapor deposition (PECVD) apparatus and anetcher where process gases are excited to a plasma state in a chamberand contact a substrate, the plasma apparatus may be a fabricationapparatus for a liquid crystal display (LCD) device or a semiconductordevice. In addition, the substrate may be a glass substrate for an LCDdevice or a wafer for a semiconductor device.

FIG. 3 is a schematic cross-sectional view of a plasma apparatusaccording to an exemplary embodiment of the present invention.

In FIG. 3, a plasma apparatus has a process chamber 300 including a lid312 and a chamber body 314. A gas inlet pipe 322 is formed through amiddle portion of the lid 312 and a backing plate (not shown) under thelid 312. A shower head 320 having a plurality of through holes (notshown) is formed under the backing plate. Accordingly, source gases areinjected to the shower head 320 through the gas inlet pipe 322 and aredispersed into a space over a susceptor 330 in the process chamber 300through the plurality of through holes. Since a gas dispersion unitincluding the backing plate and the shower head 320 is connected to ahigh frequency (e.g., a radio frequency) power supply unit 324, thesource gases are excited to have a plasma state. For example, the showerhead 320 of the gas dispersion unit may function as an upper electrodeto obtain a plasma state of the source gases. In addition, the chamberbody 314 has a slot valve 346 for transferring a substrate “S.” Inanother exemplary embodiment, the source gases may be injected into theprocess chamber 300 through a sidewall thereof and a gas dispersion unitmay be formed of an injector type over a boundary portion of thesusceptor 330.

The susceptor 330 is disposed in the chamber body 314 and separated fromthe shower head 320. After a substrate “S” is transferred into theprocess chamber 300, the substrate “S” is placed on the susceptor 330. Aheater (not shown) connected to an external power source (not shown) isformed in the susceptor 330 for heating the substrate “S” during afabrication process. For example, the susceptor 330 may function as alower electrode to obtain a plasma state of the source gases. Asusceptor-supporter 334 perpendicularly extends from a rear centralportion of the susceptor 330 and a susceptor driving unit 344 such as amotor is connected to the susceptor supporter 334 to move up and downthe susceptor 330. In addition, a gas outlet pipe 342 is formed througha bottom portion of the chamber body 314. The gas outlet pipe 342 isconnected to a vacuum pump (not shown) to evacuate residual gases andparticles in the process chamber 300.

Specifically, a substrate supporting unit 350 including a wire 352 (ofFIG. 4A) is disposed over the susceptor 330. The wire 352 transverses aninner space of the process chamber 300 and supports the substrate “S.”

FIGS. 4A and 4B are schematic plane and perspective views, respectively,showing a substrate supporting unit in a plasma apparatus according toan exemplary embodiment of the present invention.

In FIGS. 4A and 4B, a substrate supporting unit 350 includes a pluralityof wires 352, a supporting frame 354 and a supporting frame terminal359. The plurality of wires 352 include a first wire 352 a and a secondwire 352 b crossing the first wire 352 a, and the supporting frame 354has a rectangular shape including first, second, third and fourth sides354 a, 354 b, 354 c and 354 d. The supporting frame 354 may have adifferent shape according to a substrate having a different shape inanother embodiment. Both ends of each wire 352 are connected to theopposite sides of the supporting frame 354, respectively. The supportingframe terminal 359 is formed on a sidewall of the process chamber 300(of FIG. 3) and the supporting frame 354 is placed on the supportingframe terminal 359.

The plurality of wires 352 substantially contact and support a substratewhile the substrate is transferred from an exterior of the processchamber 300 (of FIG. 3) to the susceptor 330 and from the susceptor 330to the exterior of the process chamber 300 (of FIG. 3). When a substratehas a rectangular shape including two long side and two short sides, forexample, the plurality of wires 352 may include first wires 352 aparallel to the long sides of the substrate and second wires 352 bparallel to the short sides of the substrate. The first wires 352 a maycorrespond to long edge portions of the substrate, and the second wire352 b may correspond to a short edge portion of the substrate oppositeto a slot valve 346 (of FIG. 3) of the process chamber 300 (of FIG. 3).The first wires 352 a may have one first wire corresponding to a centralportion of the substrate. However, when one first wire is used, thesubstrate may be defected due to an inclination of the substrate duringa transfer between the plurality of wires 352 and the susceptor 330.Accordingly, at least two symmetric first wires 352 a may be used forthe plurality of wires 352 along a direction parallel to the long sidesof the substrate.

The plurality of wires 352 may have a predetermined tension forsupporting the substrate by the supporting frame 354 having the first,second, third and fourth sides 354 a, 354 b, 354 c and 354 d. Forexample, the first wires 352 a may be connected to the second and fourthsides 354 b and 354 d, and the second wires 352 b may be connected tothe first and third sides 354 a and 354 c. When the supporting frame 354has a predetermined thickness, the plurality of wires 352 may beconnected to one of top, middle and bottom portions of the supportingframe 354. In addition, one of the sides of the supporting frame 354 hasan open portion 358 so that a robot arm 360 (of FIG. 6A) having asubstrate “S” (of FIG. 3) thereon can move into and out of thesupporting frame 354 over the susceptor 330. Accordingly, the openportion 358 may be formed at a central portion of the fourth side 354 dadjacent to the slot valve 346 (of FIG. 3).

The supporting frame 354 may be directly connected to the processchamber 300 (of FIG. 3) by a fixing means such as a bolt and nut inanother embodiment. In this embodiment, the supporting frame 354 isplaced on the supporting frame terminal 359 formed on a sidewall of theprocess chamber 300 (of FIG. 3). For example, the supporting frameterminal 359 may be formed on three portions of the sidewallcorresponding to the first, second and third sides 354 a, 354 b and 354c except a portion corresponding to the fourth side 354 d and the slotvalve 346 (of FIG. 3).

FIG. 5 is a schematic cross-sectional view taken along a line V-V ofFIG. 4A.

As shown in FIG. 5, the plurality of wires 352 are disposed over thesusceptor 330 in the chamber body 314 and connected to the supportingframe 354 over boundary portions of the susceptor 330. The supportingframe 354 contacts and is placed on the fixing means 359 formed on theinner surface of the chamber body 314. Further, an edge frame 362 may bedisposed over the supporting frame 354 and the plurality of wires 352.The edge frame 362 may cover the substrate “S” (of FIG. 3) and may beplaced on an edge frame terminal 364 formed on the inner surface of thechamber body 314.

The supporting frame 354 may be formed not to overlap the susceptor 330in another embodiment. In this embodiment, since the supporting frame354 overlaps the susceptor 330, the supporting frame 354 contacts theboundary portion of the susceptor 330 when the susceptor 330 moves up.Accordingly, the supporting frame 354 is supported by the susceptor 330while the susceptor 330 having the substrate “S” of (FIG. 3) thereonmoves up and down with the supporting frame 354 and the plurality ofwires 352. As a result, the fixing means 359 supports the supportingframe 354 before the susceptor 330 moves up and prevents a continuousdecent of the supporting frame 354 when the susceptor moves down.

When the susceptor 330 moves up to support the substrate “S” (of FIG.3), it is required that the substrate “S” (of FIG. 3) be horizontallyplaced on the susceptor 330. When the substrate “S” (of FIG. 3) is nothorizontally placed on the susceptor 330, a heat from a heater in thesusceptor 330 is not uniformly transmitted to the substrate “S” (of FIG.3) and a thin film formed on the substrate “S” (of FIG. 3) has a pooruniformity in thickness. Accordingly, the susceptor 330 has a pluralityof wire grooves 332 corresponding the plurality of wires 352 so that thesubstrate “S” (of FIG. 3) can be horizontally placed on the susceptor330. The plurality of wires 352 can be completely wrapped in theplurality of wire grooves 332.

FIGS. 6A to 6F are schematic perspective views showing a method oftransferring a substrate in a plasma apparatus according to an exemplaryembodiment of the present invention and FIGS. 7A to 7F are schematiccross-sectional views showing a method of transferring a substrate in aplasma apparatus according to an exemplary embodiment of the presentinvention.

In FIGS. 6A and 7A, the substrate “S” on the robot arm 360 istransferred into the process chamber 300 (of FIG. 3) through the slotvalve 346 (of FIG. 3). The edge frame 362, the supporting frame 354 andthe susceptor 330 are disposed in the process chamber 300 (of FIG. 3).The edge frame 362 and the supporting frame 354 are connected to thesidewall of the chamber body 314 through the edge frame terminal 364 andthe supporting frame terminal 359, respectively.

In FIGS. 6B and 7B, the robot arm 360 having the substrate “S” thereonmoves and is arranged at a central portion of the process chamber 300(of FIG. 3) corresponding to the susceptor 330. The robot arm 360 havingthe substrate “S” thereon is placed between the edge frame 362 and thesupporting frame 354. Accordingly, the plurality of wires 352 and thesupporting frame 354 are spaced apart from a bottom surface of the robotarm 360 and a top surface of the susceptor 330. Then, the robot arm 360having the substrate “S” thereon moves down.

In FIGS. 6C and 7C, since the supporting frame 354 has the open portion358, the robot arm 360 having the substrate “S” thereon can be arrangedin the supporting frame 354 without contact of the robot arm 360 and thesupporting frame 354. Since the plurality of the wires 352 is disposedoutside the robot arm 360, the plurality of wires 352 contacts thebackside of the substrate “S.” Accordingly, the substrate “S” issupported by the plurality of wires 352 and the robot arm 360 isseparated from the substrate “S.” The robot arm 360 keeps moving downeven after the plurality of wires 352 supports the substrate “S.”

In FIGS. 6D and 7D, the robot arm 360 stops moving down beforecontacting the susceptor 330 and moves out of the process chamber 300(of FIG. 3). As a result, the substrate “S” is fully supported by theplurality of wires 352 connected to the supporting frame 354. Inaddition, the supporting frame 354 is supported by the supporting frameterminal 359 fixed on the sidewall of the process chamber 300 (of FIG.3). The substrate “S” and the plurality of wires 352 are separated fromthe susceptor 330. Then, the susceptor 330 moves up by the susceptordriving unit 344 (of FIG. 3).

In FIGS. 6E and 7E, the plurality of wires 352 contact the top surfaceof the susceptor 330. Since the susceptor 330 has the plurality of wiregrooves 332, the plurality of wires 352 are completely wrapped in theplurality of wire grooves 332. If the susceptor 330 does not have theplurality of wire grooves 332, the plurality of wires may constituteprotrusions of the susceptor 330 and the substrate “S” may not behorizontally placed on the susceptor 330. Portions of the substrate “S”adjacent to the plurality of wires 352 do not contact the susceptor 330,while the other portions of the substrate “S” far from the plurality ofwires 352 contact the susceptor 330. Accordingly, the heat from theheater (not shown) in the susceptor 330 is not completely transmitted tothe substrate “S” and the incomplete transmission of the heat may causea poor uniformity of the thin film in thickness. In this embodiment,since the plurality of wires 352 are completely wrapped in the pluralityof wire grooves 332, the susceptor 330 does not have a protrusion on thetop surface thereof and the substrate “S” is horizontally placed on thesusceptor 330.

If the supporting frame 354 is formed not to contact the susceptor 330even after the susceptor 330 moves up, the supporting frame 354 may besuspended by the plurality of wires 352 and it is hard to obtain aconstant tension of the plurality of wires 352. Accordingly, an outerbottom surface of the supporting frame 354 may contact a top surface ofthe supporting frame terminal 359 and an inner bottom surface of thesupporting frame 354 may contact a top surface of the susceptor 330 whenthe susceptor 330 moves up.

In FIGS. 6F and 7F, the susceptor 330 further moves up. Since thesupporting frame 354 is not fixed to the supporting frame terminal 359,the supporting frame 354, the substrate “S” and the plurality of wires352 move up with the susceptor 330. Accordingly, the supporting frame354 is separated from the supporting frame terminal 359, and then theedge frame 362 contacts boundary portions of the substrate “S” and thesusceptor 330 to prevent a leakage of the source gases. As a result, thesupporting frame 354 is movable above the supporting frame terminal 359and is protruded toward a central portion of the process chamber 300 (ofFIG. 3) to contact the susceptor 330.

Next, the source gases are excited to a plasma state and are depositedon the substrate “S” to form a thin film. After forming the thin film,the substrate “S” having the thin film thereon is transferred out of theprocess chamber 300 (of FIG. 3) through a procedure reverse to theprocedure shown in FIGS. 6A to 6F and 7A to 7F. After the thin film isformed on the substrate “S,” the susceptor 330 having the substrate “S”and the supporting frame 354 thereon moves down and the supporting frame354 is supported by the supporting frame terminal 359. Next, as thesusceptor 330 further moves down, the supporting frame 354 and theplurality of wires 352 are separated from the susceptor 330. As aresult, the substrate “S” is supported by the plurality of wires 352.Next, the robot arm 360 moves into the process chamber 300 (of FIG. 3)and is disposed between the substrate “S” and the susceptor 330. Then,the robot arm 360 moves up to contact the substrate “S” and theplurality of wires 352 are separated from the substrate “S.” As aresult, the substrate “S” is supported by the robot arm 360. Next, therobot arm 360 having the substrate “S” thereon moves out of the processchamber 300 (of FIG. 3).

In a plasma apparatus according to this embodiment of the presentinvention, a substrate is transferred using a plurality of wires 352instead of a plurality of lift pins. The plurality of wires 352 areinterposed in the plurality of wire grooves 332 of during a fabricationprocess of a thin film. The substrate “S” is heated by a heater in thesusceptor 330 during the fabrication process of a thin film. After thefabrication process, a cleaning gas including fluorine (F) or chlorine(Cl) is injected into the process chamber 300 (of FIG. 3) to evacuateresidual gases. Accordingly, the plurality of wires 352 may be formed ofa metallic material having a high tension, a high corrosive resistanceand a high thermal resistance. For example, one of stainless steelincluding chromium (Cr) or nickel (Ni), inconel alloy, monel alloy,hastelloy alloy, steel for piano and high carbon steel for piano may beused for the plurality of wires 352.

FIG. 8 is a schematic perspective view showing a substrate supportingunit in a plasma apparatus according to another exemplary embodiment ofthe present invention. In FIG. 8, elements the same as those of FIG. 4Bhave the same reference numbers as those of FIG. 4B, and illustrationsfor the elements are omitted.

In FIG. 8, a substrate supporting unit 350 includes a plurality of wires352, a supporting frame 354 and a supporting frame terminal 359. Thesupporting frame 354 has a first, second, third and fourth sides 354 a,354 b, 354 c and 354 d. The fourth side 354 d corresponding to a slotvalve (not shown) has an indented shape of a central upper horizontalportion 355 a, a boundary upper horizontal portion 355 b, a lowerhorizontal portion 355 c and a vertical portion 355 d connecting theupper horizontal portions 355 a and 355 b and the lower horizontalportion 355 c. The plurality of wires 352 are connected to the upperhorizontal portions 355 a and 355 b.

FIGS. 9A and 9B are schematic perspective views showing a method oftransferring a substrate in a plasma apparatus according to anotherexemplary embodiment of the present invention.

In FIG. 9A, a substrate “S” on a robot arm 360 is transferred into aprocess chamber (not shown) through the slot valve (not shown). Asubstrate supporting unit 350 including a plurality of wires 352, asupporting frame 354 and a supporting frame terminal 359 and a susceptor330 are disposed in the process chamber. The robot arm 360 having thesubstrate “S” thereon moves into the process chamber and is disposedover the substrate supporting unit 350. Then, the robot arm 360 movesdown and the substrate “S” contacts the plurality of wires 352 a.Accordingly, the substrate “S” is supported by the plurality of wires352 a. Since a fourth side 354 d of the supporting frame 354 has anindented portion consisting of a central upper horizontal portion 355 a,a boundary upper horizontal portion 355 b, a lower horizontal portion355 c and a vertical portion 355 d connecting the upper horizontalportions 355 a and 355 b and the lower horizontal portion 355 c, therobot arm 360 can move down without contacting the supporting frame 354.

In FIG. 9B, the robot arm 360 moves out of the process chamber withoutcontacting the supporting frame 354 due to the intended portion of thefourth side 354 d. The intended portion of the supporting frame 354 mayhave various shapes in another embodiments.

FIG. 10 is a schematic cross-sectional view of a plasma apparatusaccording to another exemplary embodiment of the present invention andFIG. 11 is a schematic perspective view showing a substrate supportingunit in a plasma apparatus according to another exemplary embodiment ofthe present invention.

In FIGS. 10 and 11, a plasma apparatus has a process chamber 300 and asubstrate “S” is inserted into the process chamber 300 through a slotvalve 346. The inserted substrate “S” is supported by a plurality ofwires 352 and a plurality of lift pins 400 of a substrate supportingunit 350. The plurality of wires 352 and the plurality of lift pins 400correspond to a central portion and a boundary portion of the substrate“S,” respectively. In addition, the plurality of wires 352 are disposedalong a direction parallel to a long side of the substrate “S” and theplurality of lift pins 400 are spaced apart from each other. Theplurality of wires 352 are connected to a supporting frame 354 havingfirst, second, third and fourth sides 354 a, 354 b, 354 c and 354 d, andthe fourth side 354 d has an indented portion consisting of a centralupper horizontal portion 355 a, a boundary upper horizontal portion 355b, a lower horizontal portion 355 c and a vertical portion 355 dconnecting the upper horizontal portions 355 a and 355 b and the lowerhorizontal portion 355 c, the robot arm (not shown) can move downwithout contacting the supporting frame 354. The plurality of lift pins400 are disposed through a boundary portion of a susceptor 330.

FIGS. 12A to 12D are schematic cross-sectional views showing a method oftransferring a substrate in a plasma apparatus according to anotherexemplary embodiment of the present invention.

In FIG. 12A, the supporting frame 354 is disposed over the susceptor 330and the plurality of lift pins 400 are protruded above a top surface ofthe susceptor 330 before the substrate “S” is inserted into the processchamber 300 (of FIG. 10). The plurality of wires 352 are formed in thesupporting frame 354 and the supporting frame 354 is placed on asupporting frame terminal 359 formed on a chamber body 314. Theplurality of wires 352 has substantially the same height as theplurality of lift pins 400.

In FIG. 12B, the robot arm 360 having the substrate “S” thereon movesinto the process chamber 300 (of FIG. 10) and is disposed over thesusceptor 330. The plurality of wires 352 and the plurality of lift pins400 are spaced apart from the substrate “S.”

In FIG. 12C, the robot arm 360 having the substrate “S” thereon movesdown and the substrate “S” is disposed in the supporting frame 350.Accordingly, the substrate contacts the plurality of wires 352 and theplurality of lift pins 400. Since the supporting frame 354 has an openportion 358 (of FIG. 11), the robot arm 360 can further move under thesupporting frame 354. As a result, the robot arm 360 is separated fromthe substrate “S” and the substrate “S” is supported by the plurality ofwires 352 and the plurality of lift pins 400. The plurality of wires 352corresponds to a central portion of the substrate “S” and the pluralityof lift pins 400 corresponds to a boundary portion of the substrate “S.”Then, the robot arm 360 moves out of the process chamber 300 (of FIG.10) through the slot valve 346 (of FIG. 10).

In FIG. 12D, the susceptor 330 having the substrate “S” thereon moves upby a susceptor driving unit (not shown) and the plurality of wires 352are inserted into a plurality of wire grooves 332 of the susceptor 330.At the same time, the plurality of lift pins 400 relatively move downthrough a plurality of lift pin holes 336 in the susceptor 330. As aresult, the substrate “S” contacts the susceptor 330 and is supported bythe susceptor 330. A top portion 402 of each lift pin 400 may have adiameter greater than the other portion of each lift pin 400 to preventcomplete separation of each lift pin 400 from the susceptor 330.Similarly, each lift pin hole 336 may have a shape corresponding to eachlift pin 400.

Next, the susceptor 330 having the substrate “S” thereon further movesup and a thin film is formed on the substrate “S.” After the thin filmis formed on the substrate “S,” the substrate “S” may be transferred outof he process chamber 300 (of FIG. 10) by inversely performing theprocedure of FIGS. 12A to 12D.

FIG. 13 is a schematic cross-sectional view of a plasma apparatusaccording to another exemplary embodiment of the present invention, andFIGS. 14A and 14B are schematic plane and perspective views,respectively, showing a substrate supporting unit in a plasma apparatusaccording to another exemplary embodiment of the present invention. InFIGS. 13, 14A and 14B, elements the same as those of FIGS. 3, 4A and 4Bhave the same reference numbers as those of FIGS. 3, 4A and 4B, andillustrations for the elements are omitted.

In FIG. 13, a process chamber 800 includes a lid 812 and a chamber body814 under the lid 812. A gas inlet pipe 822 is formed through the lid812, and a gas dispersion unit including a backing plate and a showerhead 820 is disposed under the lid 812. The gas dispersion unit isconnected to a high frequency power (e.g., a radio frequency) supplyunit 824. A susceptor 830, a susceptor supporter 834 and a susceptordriving unit 844 are disposed in the chamber body 814, and a slot valve846 and a gas outlet pipe 846 are formed in the chamber body 814.Specifically, a substrate supporting unit 850 (of FIG. 14A) including aplurality of wires 852 is disposed between the substrate “S” and thesusceptor 830.

In FIGS. 14A and 14B, the substrate supporting unit 850 includes theplurality of wires 852, a plurality of direction changing means 854 anda plurality of wire terminals 856 and 857. Both ends of each wire 852are fixed to a sidewall of the chamber body 814 and a bottom surface ofthe chamber body 814, respectively, through first and second wireterminals 856 and 857. Each wire 852 is horizontally disposed over thesusceptor 830 and vertically extends outside the susceptor 830 by thedirection changing means 854. The direction changing means 854 may besupported by a direction changing means supporter 858, and each wire 852and the direction changing means supporter 858 may be fixed to thebottom surface of the chamber body 814 by the second wire terminal 857.In addition, a tension controlling unit 859 is connected to one end ofeach wire 852 to keep an optimum tension for supporting the substrate“S.” The tension controlling unit 859 may have a bellows type. Inaddition, the tension controlling unit 859 and the susceptor drivingunit 844 may be operated independently or simultaneously. For example,when the susceptor 830 moves up and down, the tension of each wire 852is adjusted by contracting and expanding the tension controlling unit859 of a bellows type.

The plurality of wires 852 may be disposed along a direction parallel tolong sides of the substrate “S” and may be symmetrically disposed at aboundary portion of the susceptor 830 with respect to a central line ofthe susceptor 830. In addition, the direction changing means 854 mayalter a horizontal direction of each wire 852 to a vertical direction,or vice versa. For example, a pulley may be used as the directionchanging means 854. Further, the susceptor 830 may have a plurality ofwire grooves 832 corresponding to the plurality of wires 852.Accordingly, the plurality of wires 852 can be completely inserted intothe plurality of wire grooves 832, thereby the substrate “S”horizontally contacting the susceptor 830. Moreover, since the substratesupporting unit 850 does not include a supporting frame, the robot arm860 having the substrate “S” thereon freely moves into and out of theprocess chamber 800 without any limitation regarding a supporting frame.

As a result, a first end of the wire 852 is connected to the sidewall ofthe chamber body 814 opposite to the slot valve 846 through the firstwire terminal 856 and a second end of the wire is connected to thebottom surface of the chamber body 814 through the second wire terminal857. The wire 852 horizontally extends over the susceptor 830 andvertically extends by the direction changing means 854 at an outer upperportion of the susceptor 830 adjacent to the slot valve 846. The tensioncontrolling unit 859 is connected to the second end of the wire 852 toadjust tension of the wire 852.

FIGS. 15A and 15B are schematic plane and perspective views,respectively, showing a substrate supporting unit in a plasma apparatusaccording to another exemplary embodiment of the present invention. InFIGS. 14A and 14B, elements the same as those of FIGS. 3, 4A and 4B havethe same reference numbers as those of FIGS. 3, 4A and 4B, andillustrations for the elements are omitted.

In FIGS. 15A and 15B, a substrate supporting unit 850 includes aplurality of wires 852, a plurality of first direction changing means854, a plurality of second direction changing means 856 and a pluralityof wire terminals 857. Both ends of each wire 852 are connected a bottomsurface of the chamber body 814 through the wire terminals 857. The wire852 vertically extends from the bottom surface of the chamber body 814.The direction of the wire 852 is changed by the first direction changingmeans 854 and the wire 852 horizontally extends over a susceptor 830.The direction of the wire 852 is changed again by the second directionchanging means 855 and the wire 852 vertically extends to the bottomsurface of the chamber body 814. As a result, the first and seconddirection changing means 854 and 855 correspond to one wire 852. Thewire 852 has a U-shape as a whole by the first and second directionchanging means 854 and 855, and two ends of the wire 852 are connectedto two opposite portions of the bottom surface of the chamber body 814.

The first and second direction changing means 854 and 855 may besupported by a direction changing means supporter 858, and the wire 852and the direction changing means supporter 858 may be connected to thebottom surface of the chamber body 814 through the wire terminal 857. Inaddition, a tension controlling unit 859 is connected to two ends of thewire 852 to keep an optimum tension for supporting the substrate “S.”For example, the tension controlling unit 859 may have a bellows type.The tension controlling unit 859 and the susceptor driving unit 844 maybe operated independently or simultaneously. For example, a connectionbar 859 a may connect the susceptor driving unit 844 and the tensioncontrolling unit 859 such that the susceptor driving unit 844 and thetension controlling unit 859 are simultaneously operated. When thesusceptor 830 moves up and down, the tension of each wire 852 isadjusted by contracting and expanding the tension controlling unit 859of a bellows type. Further, since the susceptor 830 has a plurality ofwire grooves 832 corresponding to the plurality of wires 852, theplurality of wires 852 are completely inserted into the plurality ofwire grooves 832 when the susceptor 830 moves up.

FIGS. 16A and 16B are schematic perspective and plane views showing asubstrate supporting unit in a plasma apparatus according to anotherexemplary embodiment of the present invention.

In FIGS. 16A and 16B, a substrate supporting unit 850 includes aplurality of wires 852 and a plurality of wire terminals 856. Theplurality of wires 852 includes first wires 852 a parallel to long sidesof a susceptor 830 and second wires 852 b parallel to short sides of thesusceptor 830. Accordingly, the first and second wires 852 a and 852 bcross each other and are horizontally disposed over the susceptor 830.Each wire 852 is fixed to a sidewall of a chamber body 814 through thewire terminals 856.

A slot valve 846 having a T-shape is formed on the sidewall of thechamber body 814. Accordingly, a width of an upper portion 848 a of theslot valve 846 is greater than a width of a lower portion 848 b of theslot valve 846, and two auxiliary sidewalls 847 are formed at the lowerportion 848 b of the slot valve 846. Since a robot arm 860 (of FIG. 17A)having a substrate “S” (of FIG. 17A) thereon moves into and out of aprocess chamber through the upper portion 848 a of the slot valve 846,the upper portion 848 a has a width corresponding to the substrate “S”(of FIG. 17A). In addition, since only the robot arm 860 (of FIG. 17A)moves up and down through the lower portion 848 b, the lower portion mayhave a width corresponding to the robot arm 860 (of FIG. 17A) narrowerthan the substrate “S” (of FIG. 17A). In another embodiment, the lowerportion may have a triangular shape such that a width of the lowerportion decreases along a downward direction. The ends of the firstwires 852 a may be fixed to the auxiliary sidewalls 847 so that adistance between the slot valve 846 and the first wires 852 a can beautomatically adjusted.

FIGS. 17A to 17F are schematic cross-sectional views showing a method oftransferring a substrate in a plasma apparatus according to anotherexemplary embodiment of the present invention. Even though FIGS. 17A to17F corresponds to a substrate supporting unit of FIGS. 13, 14A and 14B,the method of transferring a substrate of FIGS. 17A to 17F may beapplied to a substrate supporting unit of FIGS. 15A, 15B, 16A and 16B.

In FIG. 17A, the robot arm 860 having the substrate “S” thereon isinserted into the process chamber through the upper portion 848 a of theslot valve 846. The substrate supporting unit 850 including theplurality of wires 852 and the susceptor 830 are formed in the processchamber. In addition, the plurality of wires 852 are connected to thetension controlling unit 859 through a bottom of the chamber body 814.

In FIG. 17B, the robot arm 860 having the substrate “S” thereon isdisposed at a central portion of the process chamber over the susceptor830 and the plurality of wires 852 of the substrate supporting unit 850.The plurality of wires 852 are separated from the substrate “S” and thesusceptor 830. Then, the robot arm 860 having the substrate “S” movesdown.

In FIG. 17C, since a gap between the plurality of wires 852 is widerthan the robot arm 860, the plurality of wires 852 contacts thesubstrate “S” without contacting the robot arm 860. As the robot arm 860further moves down, the robot arm 860 is separated from the substrate“S” and the substrate “S” is supported by the plurality of wires 852.

In FIG. 17D, the robot arm 860 moves out of the process chamber throughthe lower portion 848 b.

In FIG. 17E, the susceptor 830 moves up to contact the plurality ofwires 852. Since the susceptor 860 includes a plurality of wire grooves832, the plurality of wires 852 are completely inserted into theplurality of wire grooves 832 of the susceptor 830. Accordingly, thesubstrate “S” uniformly contacts the susceptor 830 to be supported bythe susceptor 830. The tension of the plurality of wires 852 is notadjusted by the tension controlling unit 859 until the susceptor 830contacts the substrate “S.”

In FIG. 17F, the susceptor 830 having the substrate “S” thereon furthermoves up. Since the plurality of wires 852 in the plurality of wiregrooves 832 also moves up with the susceptor 830, the plurality of wires852 may be expanded to change the tension of the plurality of wires 852.Accordingly, the tension controlling unit 859 adjust the tension of theplurality of wires 852 to prevent a break of the plurality of wires 852and a defect of the substrate “S” due to the plurality of wires 852. Forexample, when the susceptor 830 having the substrate “S” thereon movesup, the tension controlling unit 859 of a bellows type may contract tokeep an optimum tension of the plurality of wires 852. Substantially, alength of the plurality of wires 852 in the process chamber increases.Even though not shown in FIG. 17F, the tension controlling means 859 andthe susceptor 830 may be operated independently or simultaneously.

Next, the source gases are excited to a plasma state and are depositedon the substrate “S” to form a thin film. After forming the thin film,the substrate “S” having the thin film thereon is transferred out of theprocess chamber through a procedure reverse to the procedure shown inFIGS. 17A to 17F. After the thin film is formed on the substrate “S,”the susceptor 830 having the substrate “S” thereon moves down and thetension controlling means 859 adjust the tension of the plurality ofwires 852. For example, the tension controlling means 859 of a bellowstype may expand to keep an optimum tension of the plurality of wires852, thereby a length of the plurality of wires 852 in the processchamber substantially decreasing. Next, as the susceptor 830 furthermoves down, the plurality of wires 852 are separated from the susceptor830 to support the substrate “S.” Next, the robot arm 860 moves into theprocess chamber through the lower portion 848 b of the slot valve 846and is disposed between the substrate “S” and the susceptor 830. Then,the robot arm 860 moves up to contact the substrate “S” and theplurality of wires 852 are separated from the substrate “S.” As aresult, the substrate “S” is supported by the robot arm 860. Next, therobot arm 860 having the substrate “S” thereon moves out of the processchamber through the upper portion 848 a of the slot valve 846.

FIGS. 18 and 19 are schematic cross-sectional and plane views,respectively, showing a substrate supporting unit in a plasma apparatusaccording to another exemplary embodiment of the present invention.

In FIGS. 18 and 19, a substrate supporting unit 850 includes a wire 852crossing a central portion of a susceptor 830, a direction changingmeans 854, a direction changing means supporter 858, a first wireterminal 856, a second wire terminal 857 and a plurality of lift pins900. The wire 852 horizontally extends over the susceptor 830. Since thehorizontal direction of the wire 852 is changed into a verticaldirection by the direction changing means 854, the wire 852 verticallyextends outside the susceptor 830. The direction changing means 854 maybe supported by the direction changing means supporter 858. A first endof the wire 852 is connected to a sidewall of a chamber body 814 throughthe first wire terminal 856 and a second end of the wire 852 isconnected to a tension controlling unit 859 through the second wireterminal 857.

The plurality of lift pins 900 correspond to a boundary portion of thesusceptor 930, while the wire 852 corresponds to a central portion ofthe susceptor 830. In addition, the wire is parallel to a long side 830a of the susceptor 830. Accordingly, a substrate “S” is supported by theplurality of lift pins 900 at a boundary portion of the substrate “S”and the wire 852 at a central portion of the substrate “S.” Theplurality of lift pins 900 may be formed of ceramic or stainless steel.

FIGS. 20A to 20F are schematic cross-sectional views showing a method oftransferring a substrate in a plasma apparatus having a substratesupporting unit of FIGS. 18 and 19.

In FIG. 20A, the robot arm 860 having the substrate “S” thereon isinserted into the process chamber through the upper portion 848 a of theslot valve 846. The substrate supporting unit 850 including the wire 852and the plurality of lift pins 900 and the susceptor 830 are formed inthe process chamber. In addition, the wire 852 is connected to thetension controlling unit 859 through a bottom of the chamber body 814.Even though not shown in FIG. 20A, the wire 852 corresponds to thecentral portion of the substrate “S” and the plurality of lift pins 900correspond to the boundary portion of the substrate “S.” Furthermore,the wire 852 has substantially the same height as the top surface of theplurality of lift pins 900.

In FIG. 20B, the robot arm 860 having the substrate “S” thereon isdisposed at a central portion of the process chamber over the susceptor830, the plurality of wire 852 of the substrate supporting unit 850 andthe plurality of lift pins 900 protruded above the susceptor 830. Thewire 852 and the plurality of lift pins 900 are separated from thesubstrate “S.” Then, the robot arm 860 having the substrate “S” thereonmoves down.

In FIG. 20C, since a gap between the plurality of lift pins 900 is widerthan the robot arm 860, the plurality of lift pins 900 contact thesubstrate “S” without contacting the robot arm 860. As the robot arm 860further moves down, the robot arm 860 is separated from the substrate“S” and the substrate “S” is supported by the wire 852 and the pluralityof lift pins 900.

In FIG. 20D, the robot arm 860 moves out of the process chamber throughthe lower portion 848 b of the slot valve 846.

In FIG. 20E, the susceptor 830 moves up to contact the wire 852. Sincethe susceptor 860 includes a wire groove 832, the wire 852 is completelyinserted into the wire groove 832 of the susceptor 830. In addition, theplurality of lift pins 900 relatively moves down through a plurality oflift pin holes (not shown) in the susceptor 830. Accordingly, thesubstrate “S” uniformly contacts the susceptor 830 and is safelysupported by the susceptor 830. The tension of the plurality of wires852 is not adjusted by the tension controlling unit 859 until thesusceptor 830 contacts the substrate “S.”

In FIG. 20F, the susceptor 830 having the substrate “S” thereon furthermoves up. Since the wire 852 in the wire groove 832 also moves up withthe susceptor 830, the wire 852 may be expanded to change the tension ofthe wire 852. Accordingly, the tension controlling unit 859 adjust thetension of the wire 852 to prevent a break of the wire 852 and a defectof the substrate “S” due to the wire 852. For example, when thesusceptor 830 having the substrate “S” thereon moves up, the tensioncontrolling unit 859 of a bellows type may contract to keep an optimumtension of the wire 852. Substantially, a length of the wire 852 in theprocess chamber increases. Even though not shown in FIG. 20F, thetension controlling means 859 and the susceptor 830 may be operatedindependently or simultaneously. The plurality of lift pins 900 move uptogether with the susceptor 830.

Next, the source gases are excited to a plasma state and are depositedon the substrate “S” to form a thin film. After forming the thin film,the substrate “S” having the thin film thereon is transferred out of theprocess chamber through a procedure reverse to the procedure shown inFIGS. 20A to 20F. After the thin film is formed on the substrate “S,”the susceptor 830 having the substrate “S” thereon moves down and thetension controlling means 859 adjust the tension of the wire 852. Forexample, the tension controlling means 859 of a bellows type may expandto keep an optimum tension of the wire 852, thereby a length of the wire852 in the process chamber substantially decreasing. Next, as thesusceptor 830 further moves down, the wire 852 is separated from thesusceptor 830 and the plurality of lift pins 900 are protruded above thesusceptor 830 to support the substrate “S.” Next, the robot arm 860moves into the process chamber through the lower portion 848 b of theslot valve 846 and is disposed between the substrate “S” and thesusceptor 830. Then, the robot arm 860 moves up to contact the substrate“S,” and the wire 852 and the plurality of lift pins 900 are separatedfrom the substrate “S.” As a result, the substrate “S” is supported bythe robot arm 860. Next, the robot arm 860 having the substrate “S”thereon moves out of the process chamber through the upper portion 848 aof the slot valve 846.

In a plasma apparatus according to the present invention, a substratesupporting unit includes a plurality of wires and a susceptor includes aplurality of wire grooves corresponding to the plurality of wires. Whenthe wires have the same number as the wire grooves, the wire grooves areformed in predetermined regions of the susceptor. The wire grooves inthe predetermined regions of the susceptor may cause a poor uniformityin thickness of a thin film.

FIG. 21A is a schematic cross-sectional view showing a susceptor and asubstrate in a plasma apparatus according to an exemplary embodiment ofthe present invention and FIG. 21B is a graph showing a thickness of athin film on a substrate of FIG. 21A.

In FIG. 21A, a substrate “S” is placed on a susceptor 830 having aplurality of wire grooves 832 and a plurality of wires 852 are insertedinto the plurality of wire grooves 832. In regions of the plurality ofwire grooves 832, the substrate “S” does not contact the susceptor 830and is spaced apart from the susceptor 830. The substrate “S” is heatedby a heater (not shown) in the susceptor 830 during a fabricationprocess. Since the substrate “S” does not perfectly contact thesusceptor 830, a heat transmission at the regions of the plurality ofwire grooves 832 is different from that at the other regions and a heatis not uniformly transmitted to the substrate “S.” As a result, thesubstrate “S” has a poor uniformity in temperature.

Moreover, the susceptor 830 functions as a lower electrode to generate aplasma by using a gas dispersion unit (not shown) as an upper electrode.Since an equipotential line by an electrode of conductor is parallel toan outer surface of the electrode, the equipotential line by thesusceptor 830 has an uneven shape corresponding to a top surface of thesusceptor 830. Accordingly, an electric field generated by the susceptor830 and the gas dispersion unit is not uniform and a plasma density bythe electric field is not uniform, either.

As shown in FIG. 21B, the poor uniformity in temperature of substrate“S” and density of plasma result in a thickness difference of a thinfilm “F1” on the substrate “S.” A thickness of the thin film “F1”corresponding to the plurality of wire grooves 832 (of FIG. 21A) issmaller than a thickness of the thin film “F1” corresponding to theother regions. When the thin film “F1” has a thickness difference of Δt1and an average thickness of t_(avg1), the uniformity of the thin film“F1” may be defined as an equation of U(%)=(Δt1/2t_(avg1))×100.

FIGS. 22 and 23 are schematic plane views showing a susceptor of aplasma apparatus according to another embodiment of the presentinvention.

In FIGS. 22 and 23, a susceptor 930 has a plurality of wire grooves 932,932 a and 932 b on a top surface thereof, and the plurality of wiregrooves 932, 932 a and 932 b has a number greater than a plurality ofwires (not shown). Accordingly, the plurality of wires are inserted intosome of the plurality of wire grooves 932, 932 a and 932 b. Theplurality of wire grooves 932, 932 a and 932 b are substantially equallyspaced apart from each other, and are formed on the entire top surfaceof the susceptor 930. As a result, the plurality of wire grooves 932,932 a and 932 b are uniformly formed on the top surface of the susceptor930, thereby improving the thickness uniformity of the thin film. Theplurality of wire grooves 932 are formed to be parallel to a long sideof the susceptor 930 in FIG. 22, while the plurality of first wiregrooves 932 a are formed to be parallel to a long side of the susceptor930 and the plurality of second wire grooves 932 b are formed to beparallel to a short side of the susceptor 930.

FIG. 24A is a schematic cross-sectional view showing a susceptor and athin film of a plasma apparatus according to another embodiment of thepresent invention and FIG. 24B is a graph showing a thickness of a thinfilm on a substrate of FIG. 24B.

In FIG. 24A, a substrate “S” is placed on a susceptor 930 having aplurality of wire grooves 932 and a plurality of wires 952 are insertedinto some of the plurality of wire grooves 932. Accordingly, others ofthe plurality of wire grooves 932 may not include the plurality of wires952. The substrate “S” in regions of the plurality of wire grooves 932does not contact the susceptor 930 and is spaced apart from thesusceptor 930, while the substrate “S” in the other regions contacts thesusceptor. The plurality of wire grooves 932 are substantially equallyspaced apart from each other, and are formed on the entire top surfaceof the susceptor 930.

The substrate “S” is heated by a heater (not shown) in the susceptor 930during a fabrication process. Even though the substrate “S” does notentirely contact the susceptor 930, a heat transmission from the heaterto the substrate “S” and a plasma density are uniform because theplurality of the wire grooves 932 are formed on the entire surface ofthe susceptor 930 and are equally spaced apart from each other. As aresult, a thickness uniformity of a thin film “F2” is improved.

As shown in FIG. 24B, the thin film “F2” has a plurality of concaveportions due to the plurality of wire grooves 932. The concave portionis wider than the wire groove 932 and the plurality of wire grooves 932are spaced apart from each other such that the plurality of concavesoverlap each other. Accordingly, a thickness difference of Δt2 of thethin film “F2” is reduced. As a result, a thickness uniformity of thethin film “F2,” which may be defined as an equation ofU(%)=(Δt2/2t_(avg2))×100, is improved. When the plurality of wiregrooves 932 are formed on an entire surface of the susceptor 930 and areequally spaced apart from each other such that a plurality of concaveportions of the thin film “F2” overlap each other, a thicknessuniformity is improved. A width of each wire groove 932 and a distancebetween the adjacent wire grooves may be determined according to asusceptor size and a number of the wire grooves. For example, a width ofeach wire may be within a range of about 1 mm to about 2 mm, and adistance between the adjacent wire grooves 932 may be over about 1 mm.

In addition, when the plurality of wire grooves 932 are more than theplurality of wire 952, there exists another advantages. Since thesusceptor 930 is heated up during a fabrication process, the susceptor930 may contract or expand. Even though a first wire groove is disposedto correspond to a first wire, the first wire groove does not correspondto the first wire any more after the susceptor 930 contracted or expand.However, since the plurality of wire grooves 932 are more than theplurality of wires 952, the first wire may correspond to a second wiregroove adjacent to the first wire groove. Accordingly, the plurality ofwires 952 are inserted into the plurality of wire grooves even when thesusceptor 930 contract or expand.

A plurality of wires having an improved shape will be illustrated withreference to FIGS. 25A and 25B. FIGS. 25A and 25B are schematiccross-sectional views showing a plurality of wire grooves in a susceptorof a plasma apparatus according to another exemplary embodiment of thepresent invention.

In FIGS. 25A and 25B, a plurality of wire grooves 932 are formed on atop surface of a susceptor 930. The wire groove 932 does not have arectangular shape but a trapezoidal shape or a triangular shape incross-sectional view. Since a sidewall of the wire groove 932 isslanted, the wire 952 may slide into the wire groove 932 even when thewire groove 932 is shifted due to contraction or expansion of thesusceptor 930. Accordingly, a misalignment between the wire 952 and thewire groove 932 and an incomplete insertion of the wire 952 into thewire groove 932 are improved.

In a plasma apparatus according to the present invention, a substratesupporting unit stably supports a substrate by using a plurality ofwires or using a plurality of wires and a plurality of pins.Accordingly, a thickness uniformity of a thin film on a substrate isimproved.

It will be apparent to those skilled in the art that variousmodifications and variations can be made in the apparatus having aconveyor without departing from the spirit or scope of the invention.Thus, it is intended that the present invention covers the modificationsand variations of this invention provided they come within the scope ofthe appended claims and their equivalents.

1. A means for supporting a substrate, comprising: a susceptor; asupporting frame over the susceptor; and at least one wire connected tothe supporting frame.
 2. The means according to claim 1, furthercomprising a supporting frame terminal that supports the supportingframe.
 3. The means according to claim 1, wherein the supporting frameincludes an open portion.
 4. The means according to claim 1, wherein thesupporting frame includes an indented portion.
 5. The means according toclaim 1, wherein the at least one wire is a plurality of wires includingfirst wires parallel to a long side of the substrate and second wiresparallel to a short side of the substrate.
 6. The means according toclaim 1, wherein the susceptor includes at least one wire groove on atop surface thereof.
 7. The means according to claim 6, wherein the atleast one wire groove have substantially the same number as the at leastone wire.
 8. The means according to claim 6, wherein a number of the atleast one wire groove is greater than a number of the at least one wire.9. The means according to claim 8, wherein the at least one wire grooveis a plurality of wire grooves that are spaced apart from each other bya substantially equal distance and disposed on an entire surface of thesusceptor.
 10. The means according to claim 6, wherein the at least onewire groove has one of a rectangular shape, a trapezoidal shape and atriangular shape in a cross-sectional view.
 11. The means according toclaim 1, wherein the at least one wire is formed of one of stainlesssteel including one of chromium (Cr) and nickel (Ni), inconel alloy,monel alloy, hastelloy alloy, steel for piano and high carbon steel forpiano.
 12. An apparatus, comprising: a process chamber for treating asubstrate; a susceptor in the process chamber; a supporting frame overthe susceptor; and at least one wire connected to the supporting frame.13. The apparatus according to claim 12, further comprising a supportingframe terminal on a sidewall of the process chamber, the supportingframe being placed on the supporting frame terminal.
 14. The apparatusaccording to claim 12, wherein the supporting frame includes an openportion.
 15. The apparatus according to claim 12, wherein the supportingframe includes an indented portion.
 16. The apparatus according to claim12, wherein the susceptor includes at least one wire groove on a topsurface thereof.
 17. The apparatus according to claim 16, wherein anumber of the at least one wire groove is greater than a number of theat least one wire.
 18. The apparatus according to claim 17, wherein theat least one wire groove is a plurality of wire grooves that are spacedapart from each other by a substantially equal distance and disposed onan entire surface of the susceptor.
 19. The apparatus according to claim16, wherein the at least one wire groove has one of a rectangular shape,a trapezoidal shape and a triangular shape in a cross-sectional view.20. The apparatus according to claim 12, further comprising a pluralityof lift pins through a boundary portion of the susceptor.
 21. Anapparatus, comprising: a process chambers for treating a substrate; asusceptor in the process chamber; a plurality of wires over thesusceptor, the plurality of wires being connected to one of a sidewalland a bottom surface of the process chamber; and a tension controllingunit connected to one end of each wire.
 22. The apparatus according toclaim 21, wherein the susceptor includes a plurality of wire grooves ona top surface thereof and a number of the plurality of wire grooves isgreater than a number of the plurality of wires.
 23. The apparatusaccording to claim 22, wherein the plurality of wire grooves are spacedapart from each other by a substantially equal distance and disposed onan entire surface of the susceptor.
 24. The apparatus according to claim21, wherein the susceptor includes a plurality of wire grooves on a topsurface thereof and the plurality of wire grooves have one of arectangular shape, a trapezoidal shape and a triangular shape in across-sectional view.
 25. A method of transferring a substrate in anapparatus, comprising; a) moving a robot arm having the substratethereon into a process chamber of the apparatus, the robot arm beingdisposed over a supporting frame, a plurality of wires connected to thesupporting frame, and a susceptor under the supporting frame in theprocess chamber; b) moving down the robot arm such that the substrate issupported by the plurality of wires; c) moving the robot arm out of theprocess chamber; and d) moving up the susceptor such that the substrateis supported by the susceptor.
 26. The method according to claim 25,further comprising e) moving up the susceptor having the substratethereon such that an edge frame covers a boundary portion of thesubstrate.
 27. The method according to claim 26, wherein the step of e)includes simultaneously moving up the supporting frame with thesusceptor.
 28. A means for supporting a substrate, comprising asusceptor having a plurality of grooves on a top surface thereof. 29.The means according to claim 28, wherein the plurality of grooves aredisposed along one of one direction and two directions perpendicular toeach other.
 30. The means according to claim 28, wherein the pluralityof grooves are spaced apart from each other by a substantially equaldistance.
 31. The means according to claim 28, wherein the susceptorsupports the substrate in a process chamber.
 32. The means according toclaim 28, wherein the plurality of grooves has one of a rectangularshape, a trapezoidal shape and a triangular shape in a cross-sectionalview.